PART |
Description |
Maker |
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor Motorola, Inc
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MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
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MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC Motorola, Inc ON Semiconductor
|
MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
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IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
MTP75N05HD |
TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS
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MOTOROLA INC Motorola, Inc.
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